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Datasheet WS57C256F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | WS57C256F | HIGH SPEED 32K x 8 CMOS EPROM WS57C256F HIGH SPEED 32K x 8 CMOS EPROM
• Fast Access Time
— t ACC = 35 ns — t CE = 35 ns
KEY FEATURES • Immune to Latch-UP
— Up to 200 mA
• Low Power Consumption
— 200 µA Standby ICC
• ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962 |  STMicroelectronics | cmos |
| 2 | WS57C256F | MILITARY HIGH SPEED 32K x 8 CMOS EPROM WS57C256F HIGH SPEED 32K x 8 CMOS EPROM
• Fast Access Time
— t ACC = 35 ns — t CE = 35 ns
KEY FEATURES • Immune to Latch-UP
— Up to 200 mA
• Low Power Consumption
— 200 µA Standby ICC
• ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962 | STMicroelectronics | cmos |
| 3 | WS57C256F-1 | MILITARY HIGH SPEED 32K x 8 CMOS EPROM WS57C256F MILITARY HIGH SPEED 32K x 8 CMOS EPROM
KEY FEATURES
• Fast Access Time
— 55 ns
• EPI Processing
— Latch-up Immunity Up to 200 mA
• Low Power Consumption • DESC SMD No. 5962-86063
• Standard EPROM Pinout
GENERAL DESCRIPTION
The WS57C256F is a High Performance 256K UV Eras | STMicroelectronics | cmos |
| 4 | WS57C256F-35 | HIGH SPEED 32K x 8 CMOS EPROM WS57C256F HIGH SPEED 32K x 8 CMOS EPROM
• Fast Access Time
— t ACC = 35 ns — t CE = 35 ns
KEY FEATURES • Immune to Latch-UP
— Up to 200 mA
• Low Power Consumption
— 200 µA Standby ICC
• ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962 | STMicroelectronics | cmos |
| 5 | WS57C256F-35C | HIGH SPEED 32K x 8 CMOS EPROM WS57C256F HIGH SPEED 32K x 8 CMOS EPROM
• Fast Access Time
— t ACC = 35 ns — t CE = 35 ns
KEY FEATURES • Immune to Latch-UP
— Up to 200 mA
• Low Power Consumption
— 200 µA Standby ICC
• ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962 | STMicroelectronics | cmos |
WS5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WS512K16-xxx | 512Kx16 SRAM MODULE White Electronic Designs
512Kx16 SRAM MODULE
FEATURES
Access Times 17, 20, 25, 35ns MIL-STD-883 Compliant Devices Available Packaging • 44 pin Ceramic SOJ (Package 102) • 44 lead Ceramic Flatpack (Package 209) Organized as two banks of 256Kx16 Data Byte Control: Lower Byte (LB#) = I/O1-8 Upper B  White Electronic Designs Corporation ram | | |
| 2 | WS512K32 | 512K X 32 SRAM MODULE SMD 5962-94611 WS512K32-XXX
512Kx32 SRAM MODULE, SMD 5962-94611
FEATURES
n Access Times of 15*, 17, 20, 25, 35, 45, 55ns n Packaging 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400). 68 lead, 40mm Hermetic Low Profile CQFP, 3.5mm (0.140") (Package 502)1, Package to be developed. 68 lea  ETC ram | | |
| 3 | WS512K32-XXX | 512K X 32 SRAM MODULE SMD 5962-94611 WS512K32-XXX
512Kx32 SRAM MODULE, SMD 5962-94611
FEATURES
n Access Times of 15*, 17, 20, 25, 35, 45, 55ns n Packaging 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400). 68 lead, 40mm Hermetic Low Profile CQFP, 3.5mm (0.140") (Package 502)1, Package to be developed. 68 lea ETC ram | | |
| 4 | WS512K32BV | 512Kx32 3.3V SRAM MODULE WS512K32BV-XXXE 512Kx32 3.3V SRAM MODULE
FEATURES
s Access Times of 15†, 17, 20ns s MIL-STD-883 Compliant Devices Available s Low Voltage Operation s Packaging • 66-pin, PGA Type, 1.385 inch square Hermetic Ceramic HIP (Package 402) • 68 lead, Hermetic CQFP (G2), 22mm (0.880 inch) square (Pack ETC ram | | |
| 5 | WS512K32BV-XXXE | 512Kx32 3.3V SRAM MODULE WS512K32BV-XXXE 512Kx32 3.3V SRAM MODULE
FEATURES
s Access Times of 15†, 17, 20ns s MIL-STD-883 Compliant Devices Available s Low Voltage Operation s Packaging • 66-pin, PGA Type, 1.385 inch square Hermetic Ceramic HIP (Package 402) • 68 lead, Hermetic CQFP (G2), 22mm (0.880 inch) square (Pack ETC ram | | |
| 6 | WS512K32V | 512Kx32 SRAM 3.3V MODULE WS512K32V-XXX
HI-RELIABILITY PRODUCT
512Kx32 SRAM 3.3V MODULE
FEATURES
s Access Times of 15, 17, 20ns s Low Voltage Operation s Packaging • 66-pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP (Package 400) • 68 lead, 22.4mm (0.88") CQFP, 4.6mm (0.180") high, (Package 509)
PRELIMINARY*
s ETC ram | | |
| 7 | WS512K32V-XXX | 512Kx32 SRAM 3.3V MODULE WS512K32V-XXX
HI-RELIABILITY PRODUCT
512Kx32 SRAM 3.3V MODULE
FEATURES
s Access Times of 15, 17, 20ns s Low Voltage Operation s Packaging • 66-pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP (Package 400) • 68 lead, 22.4mm (0.88") CQFP, 4.6mm (0.180") high, (Package 509)
PRELIMINARY*
s ETC ram | |
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