Datasheet TPCC8093 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TPCC8093	Field Effect Transistor TPCC8093 MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8093 1. Applications • Lithium-Ion Secondary Batteries 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max	Toshiba

TPCC8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TPCC8106	MOSFETs TPCC8106 MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8106 1. Applications • • • Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 9.5 mΩ (typ.) (VGS = -10 V) Low leakage	Toshiba Semiconductor
TPCC8131	MOSFETs TPCC8131 MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8131 1. Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 13.5 mΩ (typ.) (VGS = -10 V) Low leakage curr	Toshiba Semiconductor
TPCC8065-H	Field Effect Transistor TPCC8065-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCC8065-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 4.3 nC (typ.) Low dra	Toshiba

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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