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Datasheet TPC8012-H Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TPC8012-H | Field Effect Transistor TPC8012-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV)
TPC8012-H
Switching Regulator Application DC-DC Converters
Unit: mm
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Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance: |Yfs| = 1.35 S (typ.) Low leakage current: IDS |
Toshiba Semiconductor |
TPC801 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TPC8016-H | Field Effect Transistor |
Toshiba Semiconductor |
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TPC8018-H | Silicon N-Channel MOS Type Field Effect Transistor |
Toshiba Semiconductor |
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TPC8017-H | Field Effect Transistor |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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