Datasheet TMD6N65G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TMD6N65G	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD6N65G/TMU6N65G VDSS = 715 V @Tjmax ID = 5.5A RDS(on) = 1.6 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N65/TMU6N65 TMD6N65G/TMU6N65G	TRinno

TMD6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TMD6N70G	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD6N70(G)/TMU6N70(G) VDSS = 770 V @Tjmax ID = 5A RDS(on) = 1.65 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N70/TMU	TRinno
TMD6N70	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD6N70(G)/TMU6N70(G) VDSS = 770 V @Tjmax ID = 5A RDS(on) = 1.65 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N70/TMU	TRinno
TMD6N65G	N-channel MOSFET Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD6N65G/TMU6N65G VDSS = 715 V @Tjmax ID = 5.5A RDS(on) = 1.6 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N65/TMU6N6	TRinno

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Número de pieza	Descripción	Fabricantes	PDF
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