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Datasheet TC58BVG0S3HBAI6 Equivalent ( PDF ) |
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1 | TC58BVG0S3HBAI6 | 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM TC58BVG0S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1 GBIT (128M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BVG0S3HBAI6 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × |
Toshiba |
TC58BVG0S3HB Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TC58BVG0S3HBAI4 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
Toshiba |
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TC58BVG0S3HBAI6 | 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM |
Toshiba |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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