Datasheet SW4N60B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SW4N60B	N-channel I-PAK/D-PAK/TO-220F MOSFET SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 4A RDS(ON) : 2.5Ω 2 1 3 2 3 1 2 2 3 1 3 1. Gate 2. Dr	SEMIPOWER

SW4N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SW4N65	N-Channel MOSFET Datasheet.es SAMWIN TO-220F TO-220 SW4N65 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.6 Ω)@VGS=10V ■ Gate Charge (Typ 18nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested BVDSS : 650V ID : 4.0A RDS(ON) : 2.6ohm 1 2 1 3 2 3 2 1. Gate	Samwin
SW4N60	N-Channel MOSFET w w w . D a t a S h e e t . c o . k r SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W SW4N60 This power MOSFET is produced in CHMC with advanced VDMOS	Samwin
SW4N60V	N-Channel MOSFET Datasheet.es SAMWIN SW4N60V N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.5ohm 1 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 25nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 3 1 1. Gate 2. Drain 3.	Samwin

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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