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Datasheet SSS4N70 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SSS4N70   N-Channel Power MOSFETS

Samsung
Samsung
datasheet SSS4N70 pdf

SSS4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SSS4N60

N-CHANNEL MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Technology co.,Ltd SSS4N60 4 Amps,600Volts N-CHANNEL MOSFET ■ DESCRIPTION The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state res
Tuofeng Semiconductor
Tuofeng Semiconductor
datasheet pdf - Tuofeng Semiconductor
SSS4N60AS

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) Absolute Maximum Ratings Symbol
Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf - Fairchild Semiconductor
SSS4N60B

600V N-Channel MOSFET

SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize
Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf - Fairchild Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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