Datasheet SSF4006 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SSF4006	MOSFET ( Transistor ) SSF4006 Feathers: ID =160A Advanced trench process technology BV=40V avalanche energy, 100% test Rdson=0.005Ω Fully characterized avalanche voltage and current Description: The SSF4006 is a new generation of high voltage and low current N–Channel enhancement mode trench power	Silikron Semiconductor

SSF4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SSF4606	MOSFET ( Transistor ) SSF4606 30V Complementary MOSFET DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.9A RD	GOOD-ARK
SSF4624	MOSFET ( Transistor ) SSF4624 DESCRIPTION The SSF4624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 40V,ID =6A RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 31mΩ @ VGS=10V	Silikron Semiconductor
SSF4606	MOSFET ( Transistor ) DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON)	Silikron Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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