Datasheet SPN9910T251TGB Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SPN9910T251TGB	N-Channel Enhancement Mode MOSFET SPN9910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p	SYNC POWER

SPN9910T251 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SPN9910T251TGB	N-Channel Enhancement Mode MOSFET SPN9910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	SYNC POWER

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