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Datasheet SPB18P06P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | SPB18P06P | SIPMOS Power-Transistor Preliminary data
SPP18P06P SPB18P06P
SIPMOS ® Power-Transistor
Features
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Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature
VDS RDS(on) ID
-60 0.13 -18.6
V
W
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 Infineon Technologies |
 |
| 2 | SPB18P06P | SIPMOS Power-Transistor
Preliminary data
SPP18P06P SPB18P06P
SIPMOS ® Power-Transistor
Features
·
Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature
VDS RDS(on) ID
-60 |
Infineon Technologies |
|
| 1 | SPB18P06PG | SIPMOS Power-Transistor SIPMOS® Power-Transistor
Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SP |
 Infineon |
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