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Datasheet RM10JT912 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RM10JT912 | (RM10JTxxx) Thick Film Chip Resistors
Document No
TRM -XX0S001B 2003/5/14 1/12
Thick Film Chip Resistors
( Standard )
Issued date page
1. Scope :
This specification applies for the RM series of thick film chip resistors made by TA-I. Conductor Over Coat
2.Construction:
Plating Sn or Sn / Pb
Resistive Element
| TA-I Technology | data |
RM1 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RM1 | Rectifier Diodes Sanken electric rectifier | | |
2 | RM10 | Rectifier Diodes Sanken electric rectifier | | |
3 | RM10 | SILICON RECTIFIER DIODES RM10 - RM10Z
PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes
FEATURES :
* * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
SILICON RECTIFIER DIODES D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0.284 (7.20) 0.268 (6.84)
MECHA EIC discrete Semiconductors rectifier | | |
4 | RM100 | HIGH SPEED SWITCHING USE INSULATED TYPE MITSUBISHI FAST RECOVERY DIODE MODULES
RM100CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
RM100CA/C1A-XXF
DC current ................................ 100A Repetitive peak reverse voltage .. 600/800/1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulated Type • UL Recogn Mitsubishi Electric Semiconductor data | | |
5 | RM100C1A-XXF | HIGH SPEED SWITCHING USE INSULATED TYPE MITSUBISHI FAST RECOVERY DIODE MODULES
RM100CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
RM100CA/C1A-XXF
DC current ................................ 100A Repetitive peak reverse voltage .. 600/800/1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulated Type • UL Recogn Mitsubishi Electric Semiconductor data | | |
6 | RM100CA-XXF | HIGH SPEED SWITCHING USE INSULATED TYPE MITSUBISHI FAST RECOVERY DIODE MODULES
RM100CA/C1A-XXF
HIGH SPEED SWITCHING USE
INSULATED TYPE
RM100CA/C1A-XXF
DC current ................................ 100A Repetitive peak reverse voltage .. 600/800/1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulated Type • UL Recogn Mitsubishi Electric Semiconductor data | | |
7 | RM100CZ-24 | HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE MITSUBISHI DIODE MODULES
RM100DZ/CZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
RM100DZ/CZ-24,-2H
• IF(AV) • VRRM
Average forward current .......... 100A Repetitive peak reverse voltage .............. 1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card Mitsubishi Electric Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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