DataSheet.es    


Datasheet RFL2N06 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1RFL2N062A/ 50V and 60V/ 0.95 Ohm/ N-Channel Power MOSFETs

Semiconductor RFL2N05, RFL2N06 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for
Intersil Corporation
Intersil Corporation
mosfet
2RFL2N062A 50V AND 60V 0.95 OHM N-CHANNEL POWER MOSFETS

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
3RFL2N06L2A/ 60V/ 0.950 Ohm/ Logic Level/ N-Channel Power MOSFET

RFL2N06L Data Sheet October 1999 File Number 1560.3 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drive
Intersil Corporation
Intersil Corporation
mosfet
4RFL2N06LTrans MOSFET N-CH 50V 2A 3-Pin TO-205AF

New Jersey Semiconductor
New Jersey Semiconductor
mosfet


RFL Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1RFL1N081A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs

Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers f
Intersil Corporation
Intersil Corporation
mosfet
2RFL1N08Trans MOSFET N-CH 80V 1A 3-Pin TO-205AF

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
3RFL1N08LTrans MOSFET N-CH 80V 1A 3-Pin TO-205AF

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
4RFL1N101A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs

Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers f
Intersil Corporation
Intersil Corporation
mosfet
5RFL1N101A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
6RFL1N10L1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET

RFL1N10L September 1998 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, autom
Intersil Corporation
Intersil Corporation
mosfet
7RFL1N10L1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS

New Jersey Semiconductor
New Jersey Semiconductor
mosfet



Esta página es del resultado de búsqueda del RFL2N06. Si pulsa el resultado de búsqueda de RFL2N06 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap