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Datasheet Q62702-A120 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | Q62702-A120 | Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) Silicon PIN Diodes
BAR 60 BAR 61
q q
RF switch RF attenuator for frequencies above 10 MHz
Type BAR 60
Marking 60
Ordering Code (tape and reel) Q62702-A786
Pin Configuration
Package1) SOT-143
BAR 61
61
Q62702-A120
Maximum Ratings per Diode Parameter Reverse voltage Forward current Total p |  Siemens Semiconductor Group | diode |
| 2 | Q62702-A1200 | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) BAT 68-07W
Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 68-07W Marking Ordering Code 87 Q62702-A1200 Pin Configuration Packa | Siemens Semiconductor Group | diode |
| 3 | Q62702-A1201 | NPN Silicon Switching Transistor Array SMBT 3904S
NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP)
4 5 6
2 1
3
VPS05604
Type SMBT 3904 | Siemens Semiconductor Group | transistor |
| 4 | Q62702-A1202 | PNP Silicon Switching Transistor Array SMBT 3906S
PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)
4 5 6
2 1
3
VPS05604
Type SMBT 3906 | Siemens Semiconductor Group | transistor |
Q62 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | Q62607-S60 | Silizium-Fotoelement Silicon Photovoltaic Cell TP 60 P
Silizium-Fotoelement Silicon Photovoltaic Cell
TP 60 P
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1120 nm q Kathode = Chipunterseite q Montage durch Schraube/Mu Siemens Semiconductor Group data | | |
| 2 | Q62607-S61 | Silizium-Fotoelement Silicon Photovoltaic Cell TP 61 P
Silizium-Fotoelement Silicon Photovoltaic Cell
TP 61 P
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1120 nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisen Siemens Semiconductor Group data | | |
| 3 | Q627002G0078 | GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) CGY 81
GaAs MMIC
l l l l l
Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match
ESD: Electros Siemens Semiconductor Group amplifier | | |
| 4 | Q62701-F51 | PNP GERMANIUM RF TRANSISTOR Siemens Semiconductor Group transistor | | |
| 5 | Q62701-F72 | PNP GERMANIUM RF TRANSISTOR Siemens Semiconductor Group transistor | | |
| 6 | Q62701-F88 | PNP GERMANIUM RHF TRANSISTOR Siemens Semiconductor Group transistor | | |
| 7 | Q62701-F92 | PNP GERMANIUM UHF TRANSISTOR Siemens Semiconductor Group transistor | |
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