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Datasheet PSMN020-150W Equivalent ( PDF )

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1 PSMN020-150W   N-channel TrenchMOS transistor

Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN020-150W FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 73 A g R
Philips
Philips
datasheet PSMN020-150W pdf

PSMN020-1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PSMN020-150W

N-channel TrenchMOS transistor

Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN020-150W FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS =
Philips
Philips
datasheet pdf - Philips
PSMN020-100YS

MOSFET ( Transistor )

PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK Rev. 02 — 7 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in
NXP Semiconductors
NXP Semiconductors
datasheet pdf - NXP Semiconductors


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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