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Datasheet NZT605 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NZT605 | NPN Darlington Transistor NZT605 NPN Darlington Transistor
January 2007
NZT605
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06.
4
3 2 1
SOT-223
1. Base 2.4. Collector 3. Emitter
Absol |  Fairchild Semiconductor | transistor |
NZT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NZT44H8 | NPN Power Amplifier D44H8 / NZT44H8
Discrete POWER & Signal Technologies
D44H8
NZT44H8
C
B
E C E C
TO-220
SOT-223
B
NPN Power Amplifier
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4Q.
Absolute Maximum Ratings*
Symbol
VCEO IC TJ, Fairchild Semiconductor amplifier | | |
| 2 | NZT45C11 | PNP Current Driver Transistor D45C11 / NZT45C11
D45C11
NZT45C11
C
B
E C E C
TO-220
SOT-223
B
PNP Current Driver Transistor
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. See NZT751 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO Fairchild Semiconductor transistor | | |
| 3 | NZT45H8 | PNP Power Amplifier D45H8 / NZT45H8
Discrete POWER & Signal Technologies
D45H8
NZT45H8
C
B
E C E C
TO-220
SOT-223
B
PNP Power Amplifier
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.
Absolute Maximum Ratings*
Symbol
VCEO IC TJ, Fairchild Semiconductor amplifier | | |
| 4 | NZT560 | NPN Low Saturation Transistor NZT560/NZT560A
July 1998
NZT560 / NZT560A
C E
B
C
SOT-223
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emi Fairchild Semiconductor transistor | | |
| 5 | NZT560A | NPN Low Saturation Transistor NZT560/NZT560A
July 1998
NZT560 / NZT560A
C E
B
C
SOT-223
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emi Fairchild Semiconductor transistor | | |
| 6 | NZT605 | NPN Darlington Transistor NZT605 NPN Darlington Transistor
January 2007
NZT605
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06.
4
3 2 1
SOT-223
1. Base 2.4. Collector 3. Emitter
Absol Fairchild Semiconductor transistor | | |
| 7 | NZT651 | NPN Current Driver Transistor NZT651
Discrete POWER & Signal Technologies
NZT651
C
E C B
SOT-223
NPN Current Driver Transistor
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4P.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collecto Fairchild Semiconductor transistor | | |
| 8 | NZT660 | PNP Low Saturation Transistor NZT660/NZT660A
July 1998
NZT660 / NZT660A
C E
B
C
SOT-223
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emi Fairchild Semiconductor transistor | | |
| 9 | NZT660A | PNP Low Saturation Transistor NZT660/NZT660A
July 1998
NZT660 / NZT660A
C E
B
C
SOT-223
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emi Fairchild Semiconductor transistor | |
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