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Datasheet MTP12N10E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MTP12N10E | TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP12N10E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTP12N10E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the |
 Motorola Semiconductors |
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| 1 | MTP12N10E | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Rail |
 New Jersey Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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