Datasheet MTD011N10RQ8 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTD011N10RQ8	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTD011N10RQ8 Spec. No. : C169Q8 Issued Date : 2015.11.30 Revised Date : 2016.05.25 Page No. : 1/9 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Repetitive Avalanche Rated  Pb-fr	Cystech Electonics

MTD011N10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTD011N10RQ8	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTD011N10RQ8 Spec. No. : C169Q8 Issued Date : 2015.11.30 Revised Date : 2016.05.25 Page No. : 1/9 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Repetitive Avala	Cystech Electonics
MTD011N10RJ3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTD011N10RJ3 Spec. No. : C169J3 Issued Date : 2016.07.27 Revised Date : Page No. : 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-fre	Cystech Electonics
MTD011N10RH8	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTD011N10RH8 Features BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 4	Cystech Electonics

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Número de pieza	Descripción	Fabricantes	PDF
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