|
|
Datasheet MTB15N06V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MTB15N06V | TMOS POWER FET 15 AMPERES MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB15N06V/D
TMOS Power Field Effect Transistor D2PAK for Surface Mount
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than do |
 Motorola Semiconductors |
 |
| 1 | MTB15N06V | Power Field Effect Transistor MTB15N06V
Designer’s™ Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than dou |
 ON Semiconductor |
|
| Esta página es del resultado de búsqueda del MTB15N06V. Si pulsa el resultado de búsqueda de MTB15N06V se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |