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Datasheet MSN0409W Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 MSN0409W   N-Channel Enhancement Mode Power MOS FET

MSN0409W 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =40V,ID =9A RDS(ON) < 16mΩ @ VGS=10V RDS(ON) < 24mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high
MORESEMI
MORESEMI		 datasheet MSN0409W pdf

MSN04 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
MSN04C0K

N-Channel Enhancement Mode Power MOS FET

MSN04C0K 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V (Typ:3.3mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche
 MORESEMI
MORESEMI		 datasheet pdf - MORESEMI
MSN0480D

N-Channel Enhancement Mode Power MOS FET

MSN0480D 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS �
 MORESEMI
MORESEMI		 datasheet pdf - MORESEMI
MSN0460D

N-Channel Enhancement Mode Power MOS FET

MSN0460D 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =40V,ID =60A RDS(ON) <13mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ●
MORESEMI
MORESEMI		 datasheet pdf - MORESEMI


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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