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Datasheet MSN0304 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 MSN0304   N-Channel Enhancement Mode Power MOS FET

MSN0304 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58mΩ @ VGS=10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ●
MORESEMI
MORESEMI		 datasheet MSN0304 pdf

MSN0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
MSN0207E

N-Channel Enhancement Mode Power MOS FET

MSN0207E 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =6.5A RDS(ON) <40mΩ @ VGS=1.8V RDS(ON) <33mΩ @ VGS=2.5V RDS(ON) <27mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acqui
 MORESEMI
MORESEMI		 datasheet pdf - MORESEMI
MSN0880M

N-Channel Enhancement Mode Power MOS FET

MSN0880M 75V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ） ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell desi
 MORESEMI
MORESEMI		 datasheet pdf - MORESEMI
MSN0880K

N-Channel Enhancement Mode Power MOS FET

MSN0880K 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ● Special process technology for high ESD capability ● Special designed for convertors and power controls ● High density cell design for ultra low
MORESEMI
MORESEMI		 datasheet pdf - MORESEMI


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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