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Datasheet MRF18090B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MRF18090B | LATERAL N-CHANNEL RF POWER MOSFETs MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18090B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and m |
 Motorola Semiconductors |
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| 3 | MRF18090BR3 | LATERAL N-CHANNEL RF POWER MOSFETs Freescale Semiconductor Technical Data
Document Number: MRF18090B Rev. 7, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier |
 Freescale Semiconductor |
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| 2 | MRF18090BS | LATERAL N-CHANNEL RF POWER MOSFETs MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18090B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and m |
Motorola Semiconductors |
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| 1 | MRF18090BSR3 | LATERAL N-CHANNEL RF POWER MOSFETs Freescale Semiconductor Technical Data
Document Number: MRF18090B Rev. 7, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier |
Freescale Semiconductor |
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