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Datasheet MGY40N60D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MGY40N60D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY40N60D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY40N60D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–pac |  Motorola Semiconductors | transistor |
MGY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY20N120D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY20N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–p Motorola Semiconductors transistor | | |
| 2 | MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY20N120D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY20N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–p  ON transistor | | |
| 3 | MGY25N120 | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY25N120/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–bl Motorola Semiconductors transistor | | |
| 4 | MGY25N120 | Insulated Gate Bipolar Transistor MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY25N120/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage bloc ON transistor | | |
| 5 | MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY25N120D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY25N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–p Motorola Semiconductors transistor | | |
| 6 | MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY25N120D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY25N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–p ON transistor | | |
| 7 | MGY30N60D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY30N60D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY30N60D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–pac Motorola Semiconductors transistor | |
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