Datasheet K7M801825B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	K7M801825B	256Kx36 & 512Kx18-Bit Flow Through NtRAM K7M803625B K7M801825B Document Title 256Kx36 & 512Kx18 Flow-Through NtRAMTM 256Kx36 & 512Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 1.0 History 1. Initial document. 1. Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at 119BGA(x18) 1.	Samsung semiconductor	data
2	K7M801825B	256Kx36 & 512Kx18-Bit Flow Through NtRAM K7M803625B K7M801825B Document Title 256Kx36 & 512Kx18 Flow-Through NtRAMTM 256Kx36 & 512Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 1.0 History 1. Initial document. 1. Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at 119BGA(x18) 1.	Samsung semiconductor	data
3	K7M801825B-QC65	256Kx36 & 512Kx18-Bit Pipelined NtRAM K7N803601B K7N801801B Document Title 256Kx36 & 512Kx18 Pipelined NtRAMTM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 1.0 History 1. Initial document. 1. Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at 119BGA(x18) 1. Final	Samsung semiconductor	data
4	K7M801825B-QC65	256Kx36 & 512Kx18-Bit Flow Through NtRAM K7N803601B K7N801801B Document Title 256Kx36 & 512Kx18 Pipelined NtRAMTM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 1.0 History 1. Initial document. 1. Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at 119BGA(x18) 1. Final	Samsung semiconductor	data
5	K7M801825B-QC65	256Kx36 & 512Kx18-Bit Pipelined NtRAMTM K7N803601B K7N801801B Document Title 256Kx36 & 512Kx18 Pipelined NtRAMTM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 1.0 History 1. Initial document. 1. Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at 119BGA(x18) 1. Final	Samsung semiconductor	data

K7M Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K7M161825A-QCI65	512Kx36 & 1Mx18 Pipelined NtRAM K7I323682M K7I321882M Document Title 1Mx36-bit, 2Mx18-bit DDRII CIO b2 SRAM 1Mx36 & 2Mx18 DDRII CIO b2 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Pin name change from DLL to Doff. 2. Vddq range change from 1.5V to 1.5V~1.8V. 3. Update JTAG test conditions. 4. Reserved p	Samsung semiconductor	data
2	K7M161825A-QCI75	512Kx36 & 1Mx18 Pipelined NtRAM	Samsung semiconductor	data
3	K7M161825M	(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM-TM ( ) K7M163625M K7M161825M Document Title 512Kx36 & 1Mx18 Flow-Through Nt RAM TM 512Kx36 & 1Mx18-Bit Flow Through Nt RAMTM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial document. 1. Update ICC & ISB values. 1. Change tOE from 3.5ns to 4.0ns at -8 . 2. Ch	Samsung semiconductor	data
4	K7M161835B	512Kx36 & 1Mx18 Flow-Through NtRAM K7M163635B K7M161835B 512Kx36 & 1Mx18 Flow-Through NtRAMTM 18Mb NtRAMTM Specification 100TQFP/165FBGA with Pb/Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS	Samsung semiconductor	data
5	K7M163625A-QCI65	512Kx36 & 1Mx18 Pipelined NtRAM K7N163601A K7N161801A Document Title 512Kx36 & 1Mx18 Pipelined N tRAM TM 512Kx36 & 1Mx18-Bit Pipelined N tRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 History 1. 1. 1. 2. 1. Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge. From	Samsung semiconductor	data
6	K7M163625A-QCI75	512Kx36 & 1Mx18 Pipelined NtRAM K7N163601A K7N161801A Document Title 512Kx36 & 1Mx18 Pipelined N tRAM TM 512Kx36 & 1Mx18-Bit Pipelined N tRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 History 1. 1. 1. 2. 1. Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge. From	Samsung semiconductor	data
7	K7M163625M	(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM-TM ( ) K7M163625M K7M161825M Document Title 512Kx36 & 1Mx18 Flow-Through Nt RAM TM 512Kx36 & 1Mx18-Bit Flow Through Nt RAMTM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial document. 1. Update ICC & ISB values. 1. Change tOE from 3.5ns to 4.0ns at -8 . 2. Ch	Samsung semiconductor	data

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Número de pieza	Descripción	Fabricantes	PDF
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