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Datasheet K7B801825B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K7B801825B | 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM K7B403625M
Document Title
128Kx36-Bit Synchronous Burst SRAM
128Kx36 Synchronous SRAM
Revision History
Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA. Change ISB2 value | Samsung semiconductor | ram |
2 | K7B801825B-QC65 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7B803625B K7B801825B
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 1.0 History Initial draft Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at 119BGA(x18) 1. Final spec | Samsung semiconductor | ram |
3 | K7B801825B-QC75 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803609B K7A801809B
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. change scan order(1) fo | Samsung semiconductor | ram |
K7B Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K7B161825A | 512Kx36 & 1Mx18 Synchronous SRAM Samsung semiconductor ram | | |
2 | K7B161835B | 512Kx36 & 1Mx18 Synchronous SRAM K7B163635B K7B161835B
512Kx36 & 1Mx18 Synchronous SRAM
18Mb B-die Sync. SRAM Specification
100TQFP with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHA Samsung Electronics ram | | |
3 | K7B163625A | 512Kx36 & 1Mx18 Synchronous SRAM K7B163625A K7B161825A
Document Title
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchronous Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature . 2. Add 165FBGA package 1. Final spec release 1. Delete Samsung semiconductor ram | | |
4 | K7B163635B | 512Kx36 & 1Mx18 Synchronous SRAM K7B163635B K7B161835B
512Kx36 & 1Mx18 Synchronous SRAM
18Mb B-die Sync. SRAM Specification
100TQFP with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHA Samsung Electronics ram | | |
5 | K7B321825M | 1Mx36 & 2Mx18 Synchronous SRAM K7B323625M K7B321825M
Document Title
1Mx36 & 2Mx18 Synchronous SRAM
1Mx36 & 2Mx18-Bit Synchronous Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 History 1. Initial draft 1. Add 165FBGA package 1. Update JTAG scan order 1. Change pin out for 165FBGA - x18/x36 ; 11B => from A to NC , 2R ==> f Samsung semiconductor ram | | |
6 | K7B321835C | 1Mx36 & 2Mx18 Synchronous SRAM K7B323635C K7B321835C
1Mx36 & 2Mx18 Synchronous SRAM
36Mb Sync. Burst SRAM Specification
100LQFP with Pb / Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRA Samsung semiconductor ram | | |
7 | K7B323625M | 1Mx36 & 2Mx18 Synchronous SRAM K7B323625M K7B321825M
Document Title
1Mx36 & 2Mx18 Synchronous SRAM
1Mx36 & 2Mx18-Bit Synchronous Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 History 1. Initial draft 1. Add 165FBGA package 1. Update JTAG scan order 1. Change pin out for 165FBGA - x18/x36 ; 11B => from A to NC , 2R ==> f Samsung semiconductor ram | |
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Número de pieza | Descripción | Fabricantes | |
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