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Datasheet K4X56163PG-LG Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K4X56163PG-LG | 16M x16 Mobile-DDR SDRAM K4X56163PG - L(F)E/G
16M x16 Mobile-DDR SDRAM
FEATURES
Mobile-DDR SDRAM
• 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle wit | Samsung semiconductor | data |
K4X Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K4X1G163PC-FE | Mobile DDR SDRAM K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L Samsung semiconductor data | | |
2 | K4X1G163PC-FG | Mobile DDR SDRAM K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L Samsung semiconductor data | | |
3 | K4X1G163PC-LE | Mobile DDR SDRAM K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L Samsung semiconductor data | | |
4 | K4X1G163PC-LG | Mobile DDR SDRAM K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L Samsung semiconductor data | | |
5 | K4X1G163PE-FGC6 | 64Mx16 Mobile DDR SDRAM K4X1G163PE - FGC6(8)
Mobile DDR SDRAM
64Mx16 Mobile DDR SDRAM
(VDD/VDDQ 1.8V/1.8V)
-1-
Revision 1.1 February 2009
Free Datasheet http://www.0PDF.com
K4X1G163PE - FGC6(8) Document Title
64Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V)
Mobile DDR SDRAM
Revision History
Revision No. 0.0 1.0 History Samsung data | | |
6 | K4X1G163PE-FGC8 | 64Mx16 Mobile DDR SDRAM K4X1G163PE - FGC6(8)
Mobile DDR SDRAM
64Mx16 Mobile DDR SDRAM
(VDD/VDDQ 1.8V/1.8V)
-1-
Revision 1.1 February 2009
Free Datasheet http://www.0PDF.com
K4X1G163PE - FGC6(8) Document Title
64Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V)
Mobile DDR SDRAM
Revision History
Revision No. 0.0 1.0 History Samsung data | | |
7 | K4X1G323PC-FE | 32Mx32 Mobile DDR SDRAM K4X1G323PC - L(F)E/G 32Mx32 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L Samsung semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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