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Datasheet K4X56163PE Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K4X56163PE16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with ad
Samsung semiconductor
Samsung semiconductor		data
2K4X56163PE-LFG16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with ad
Samsung semiconductor
Samsung semiconductor		data
3K4X56163PE-LG16M x16 Mobile DDR SDRAM

K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with ad
Samsung semiconductor
Samsung semiconductor		data


K4X Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1K4X1G163PC-FEMobile DDR SDRAM

K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L
Samsung semiconductor
Samsung semiconductor		data
2K4X1G163PC-FGMobile DDR SDRAM

K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L
Samsung semiconductor
Samsung semiconductor		data
3K4X1G163PC-LEMobile DDR SDRAM

K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L
Samsung semiconductor
Samsung semiconductor		data
4K4X1G163PC-LGMobile DDR SDRAM

K4X1G163PC - L(F)E/G 64Mx16 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L
Samsung semiconductor
Samsung semiconductor		data
5K4X1G163PE-FGC664Mx16 Mobile DDR SDRAM

K4X1G163PE - FGC6(8) Mobile DDR SDRAM 64Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) -1- Revision 1.1 February 2009 Free Datasheet http://www.0PDF.com K4X1G163PE - FGC6(8) Document Title 64Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) Mobile DDR SDRAM Revision History Revision No. 0.0 1.0 History
Samsung
Samsung		data
6K4X1G163PE-FGC864Mx16 Mobile DDR SDRAM

K4X1G163PE - FGC6(8) Mobile DDR SDRAM 64Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) -1- Revision 1.1 February 2009 Free Datasheet http://www.0PDF.com K4X1G163PE - FGC6(8) Document Title 64Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) Mobile DDR SDRAM Revision History Revision No. 0.0 1.0 History
Samsung
Samsung		data
7K4X1G323PC-FE32Mx32 Mobile DDR SDRAM

K4X1G323PC - L(F)E/G 32Mx32 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L
Samsung semiconductor
Samsung semiconductor		data



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