Datasheet IXGH32N60BU1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXGH32N60BU1	HiPerFAST IGBT HiPerFASTTM IGBT with Diode IXGH 32N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 60 A = 2.3 V = 80 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC =	IXYS Corporation

IXGH32N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXGH32N60AU1	HiPerFAST IGBT IXGH 32N60AU1 IXGH 32N60AU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE(sat) tfi = = = = 600 V 60 A 2.9V 125 ns TO-247 SMD (32N60AU1S) Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transie	IXYS Corporation
IXGH32N60A	HiPerFAST IGBT IXGH 32N60A IXGH 32N60AS VCES IC25 VCE(sat) tfi = = = = 600 V 60 A 2.9 V 125 ns HiPerFASTTM IGBT TO-247 SMD (32N60AS) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; R GE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE =	IXYS Corporation
IXGH32N60B	HiPerFAST IGBT HiPerFASTTM IGBT IXGH32N60B VCES IC25 VCE(sat) tfi = = = = 600 V 60 A 2.5 V 80 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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