Datasheet IXGH30N60BD1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXGH30N60BD1	HiPerFASTTM IGBT with Diode HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE(sat) tfi(typ) = 600 V = 60 A = 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC =	IXYS Corporation

IXGH30N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXGH30N60B2D1	IGBT Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2D1 IXGT 30N60B2D1 VCES IC25 VCE(sat) tfi typ = 600 V = 70 A < 1.8 V = 82 ns Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to	IXYS
IXGH30N60A	Low VCE(sat) IGBT VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25	IXYS Corporation
IXGH30N60	Low VCE(sat) IGBT VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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