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Datasheet IXGH25N100A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXGH25N100A | High speed IGBT VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V
I C25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
Symbol
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, |
 IXYS Corporation |
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| 1 | IXGH25N100AU1 | High speed IGBT with Diode Preliminary data
Low VCE(sat) High speed IGBT with Diode
VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V
IC25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
TO-247 AD (IXGH)
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 15 |
IXYS Corporation |
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