Datasheet IXFR10N100Q Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFR10N100Q	N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1.20 W 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances	IXYS Corporation

IXFR10N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFR10N100Q	N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1.20 W 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Cha	IXYS Corporation
IXFR10N100F	HiPerFET Power MOSFETs ISOPLUS247 HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS ID25 RDS(on) 1.05 Ω 1.20 Ω 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge an	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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