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Datasheet IXFN20N120 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IXFN20N120 | HiPerFET Power MOSFETs Advanced Technical Information
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 20N120
VDSS ID25
D
= 1200 V = 20 A RDS(on) = 0.75 Ω ≤ 300 ns trr
G S
S
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL
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IXYS Corporation |
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1 | IXFN20N120P | Polar Power MOSFET HiPerFET PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md
www.DataSheet4U.net
IXFN20N120P
VDSS ID25
RDS(on) trr
= = ≤ ≤
1200V 20A 570mΩ 300ns
Test Conditions TJ = 25°C to 150 |
IXYS Corporation |
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