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Datasheet HUF75823D3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | HUF75823D3 | 14A/ 150V/ 0.150 Ohm/ N-Channel/ UltraFET Power MOSFET HUF75823D3, HUF75823D3S
Data Sheet December 2001
14A, 150V, 0.150 Ohm, N-Channel, UltraFET® Power MOSFET Packaging
JEDEC TO-251AA JEDEC TO-252AA
DRAIN (FLANGE)
Features
• Ultra Low On-Resistance - rDS(ON) = 0.150Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER� | Fairchild Semiconductor | mosfet |
2 | HUF75823D3 | 14A/ 150V/ 0.150 Ohm/ N-Channel/ UltraFET Power MOSFET HUF75823D3, HUF75823D3S
TM
Data Sheet
April 2000
File Number
4847
14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET Packaging
JEDEC TO-251AA JEDEC TO-252AA
DRAIN (FLANGE)
Features
• Ultra Low On-Resistance - rDS(ON) = 0.150Ω, VGS = 10V • Simulation Models - Temperature Compensated P | Intersil Corporation | mosfet |
3 | HUF75823D3S | 14A/ 150V/ 0.150 Ohm/ N-Channel/ UltraFET Power MOSFET HUF75829D3, HUF75829D3S
Data Sheet December 2001
18A, 150V, 0.110 Ohm, N-Channel, UltraFET® Power MOSFET Packaging
JEDEC TO-251AA JEDEC TO-252AA
Features
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V • Simulation Models | Intersil Corporation | mosfet |
4 | HUF75823D3S | 14A/ 150V/ 0.150 Ohm/ N-Channel/ UltraFET Power MOSFET HUF75829D3, HUF75829D3S
Data Sheet December 2001
18A, 150V, 0.110 Ohm, N-Channel, UltraFET® Power MOSFET Packaging
JEDEC TO-251AA JEDEC TO-252AA
Features
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.110Ω, VGS = 10V • Simulation Models | Fairchild Semiconductor | mosfet |
HUF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | HUF75229P3 | 44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET HUF75229P3
Data Sheet December 2001
44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor Fairchild Semiconductor mosfet | | |
2 | HUF75229P3 | 44A/ 50V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET HUF75229P3
Data Sheet June 1998 File Number 4536.1
44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in ou Intersil Corporation mosfet | | |
3 | HUF75307D3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | | |
4 | HUF75307D3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per Intersil Corporation mosfet | | |
5 | HUF75307D3S | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | | |
6 | HUF75307D3S | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per Intersil Corporation mosfet | | |
7 | HUF75307P3 | 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet December 2001
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, re Fairchild Semiconductor mosfet | |
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