|
|
Datasheet HFD3-V Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | HFD3-V | RELAY 642-*B
?A0:7;7/@A>3 ?75;/9 >39/E
Gcf_ Oi4@ F799:>7 2B3
Gcf_ Oi4@ :667>><=
Gcf_ Oi4@DRD7:66876=:6?
4JFVWTJU
^ 9eW ^c_f_]nlc] mnl_hanb /\_nq__h ]icf [h^ ]ihn[]nm0 ^ Tola_ qcnbmn[h^ pifn[a_ oj ni <666WBD2
g__nm GDD Q[ln <> [h^ U_f_]il^c[ ^ Nch4 ]l__j[a_ cm 84;gg /\_nq__h ]icf [h^ ]ihn[]n02
Nch4 ]f_[ | Hongfa Technology | relay |
HFD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | HFD1N60 | N-Channel MOSFET HFD1N60_HFU1N60
Dec 2005
HFD1N60 / HFU1N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics U SemiHow mosfet | | |
2 | HFD1N60F | 600V N-Channel MOSFET HFD1N60F_HFU1N60F
Sep 2015
HFD1N60F / HFU1N60F
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics SemiHow mosfet | | |
3 | HFD1N60S | N-Channel MOSFET HFD1N60S / HFU1N60S
Sep 2009
HFD1N60S / HFU1N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteri SemiHow mosfet | | |
4 | HFD1N65 | N-Channel MOSFET HFD1N65 / HFU1N65
April 2006
HFD1N65 / HFU1N65
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Character SemiHow mosfet | | |
5 | HFD1N65S | N-Channel MOSFET HFD1N65S / HFU1N65S
HFD1N65S / HFU1N65S
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Exte SemiHow mosfet | | |
6 | HFD1N70 | N-Channel MOSFET HFD1N70 / HFU1N70
Dec 2008
HFD1N70 / HFU1N70
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characterist SemiHow mosfet | | |
7 | HFD1N80 | N-Channel MOSFET HFD1N80 / HFU1N80
April 2006
HFD1N80 / HFU1N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characterist SemiHow mosfet | |
Esta página es del resultado de búsqueda del HFD3-V. Si pulsa el resultado de búsqueda de HFD3-V se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |