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Datasheet HFA10N90Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HFA10N90Z | N-Channel MOSFET HFH10N90Z_HFA10N90Z
Oct 2016
HFH10N90Z / HFA10N90Z
900V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode
Key |  SemiHow | mosfet |
HFA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HFA04TB60 | Ultrafast/ Soft Recovery Diode Bulletin PD -2.399 rev. A 11/00
HFA04TB60
HEXFRED
Features
• • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
1 CATHODE
TM
Ultrafast, Soft Recovery Diode
BASE CATHODE
VR = 600V VF = 1.8V
4
2
Qrr * = 40nC
3 ANODE 2
Benefits
�  International Rectifier diode | | |
| 2 | HFA04TB60S | Ultrafast/ Soft Recovery Diode Bulletin PD -20614 rev. A 12/00
HFA04TB60S
HEXFRED
Features
• • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
TM
Ultrafast, Soft Recovery Diode
(K)
BASE + 2
VR = 600V VF = 1.8V Qrr * = 40nC
Benefits
• Reduced RFI and EMI • International Rectifier diode | | |
| 3 | HFA04TB60SPBF | SOFT RECOVERY DIODE PD-96035
HFA04TB60SPbF
HEXFRED
Features
Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free
TM
Ultrafast, Soft Recovery Diode
(K)
BASE + 2
VR = 600V VF = 1.8V Qrr * = 40nC
Reduced RFI and EMI Reduced Power Loss in D International Rectifier diode | | |
| 4 | HFA06TB120 | Ultrafast/ Soft Recovery Diode Bulletin PD -2.382 rev. D 12/00
HFA06TB120
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
• • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
BASE CATHODE
VR = 1200V VF(typ.)* = 2.4V IF(AV) = 6.0A Qrr (typ.)= 116nC
4
2
IR International Rectifier diode | | |
| 5 | HFA06TB120S | Soft Recovery Diode PD -20602 rev. B 01/2000
HFA06TB120S.. Series
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
• Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions (N/C)
(K)
BASE + 2
VR = 1200V VF(typ.)* = 2.4V IF(AV) International Rectifier diode | | |
| 6 | HFA06TB120SPBF | Soft Recovery Diode PD-96036
HFA06TB120SPbF.. Series
HEXFRED
Features
Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Sn International Rectifier diode | | |
| 7 | HFA08PB120 | Ultrafast/ Soft Recovery Diode Bulletin PD -2.365 rev. B 11/00
HFA08PB120
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
• • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
1 CATHODE
BASE CATHODE
VR = 1200V VF (typ.)* = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140 International Rectifier diode | | |
| 8 | HFA08PB60 | Soft Recovery Diode
Bulletin PD-20050 01/01
HFA08PB60
HEXFRED
Features
• • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
TM
Ultrafast, Soft Recovery Diode
BASE CATHODE
VR = 600V VF(typ.)* = 1.4V IF(AV) = 8.0A Qrr (typ.)= 65nC I International Rectifier diode | | |
| 9 | HFA08PB60PBF | Soft Recovery Diode
PD-95969
HFA08PB60PbF
HEXFRED
TM
Ultrafast, Soft Recovery Diode
BASE CATHODE
Features
Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count
Benefits
Ultrafas International Rectifier diode | |
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