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Datasheet FQB5N50C Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1FQB5N50CN-Channel MOSFET

FQB5N50C/FQI5N50C QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
2FQB5N50CFN-Channel MOSFET

FQB5N50CF 500V N-Channel MOSFET May 2006 FRFET FQB5N50CF 500V N-Channel MOSFET Features • 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-
Fairchild Semiconductor
Fairchild Semiconductor
mosfet


FQB Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1FQB10N20200V N-Channel MOSFET

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Fairchild Semiconductor
Fairchild Semiconductor
mosfet
2FQB10N20C200V N-Channel MOSFET

FQB10N20C/FQI10N20C QFET FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-s
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
3FQB10N20L200V LOGIC N-Channel MOSFET

FQB10N20L / FQI10N20L December 2000 QFET FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailor
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
4FQB10N50CFN-Channel MOSFET

FQB10N50CF — N-Channel QFET® FRFET® MOSFET FQB10N50CF N-Channel QFET® FRFET® MOSFET 500 V, 10 A, 610 m October 2013 Features • 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A • Low gate charge ( Typ. 45 nC) • Low Crss ( Typ. 17.5 pF) • 100% avalanche tested • F
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
5FQB10N60C600V N-Channel MOSFET

FQB10N60C / FQI10N60C QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
6FQB11N40400V N-Channel MOSFET

FQB11N40 / FQI11N40 November 2001 FQB11N40 / FQI11N40 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
7FQB11N40C400V N-Channel MOSFET

FQB11N40C/FQI11N40C QFET www.datasheet4u.com ® FQB11N40C/FQI11N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially
Fairchild Semiconductor
Fairchild Semiconductor
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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