|
|
Datasheet FQB28N15 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | FQB28N15 | 150V N-Channel MOSFET FQB28N15 / FQI28N15
December 2000
QFET
FQB28N15 / FQI28N15
150V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to mini | Fairchild Semiconductor | mosfet |
FQB Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | FQB10N20 | 200V N-Channel MOSFET
!
"
Fairchild Semiconductor mosfet | | |
2 | FQB10N20C | 200V N-Channel MOSFET FQB10N20C/FQI10N20C
QFET
FQB10N20C/FQI10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-s Fairchild Semiconductor mosfet | | |
3 | FQB10N20L | 200V LOGIC N-Channel MOSFET FQB10N20L / FQI10N20L
December 2000
QFET
FQB10N20L / FQI10N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailor Fairchild Semiconductor mosfet | | |
4 | FQB10N50CF | N-Channel MOSFET FQB10N50CF — N-Channel QFET® FRFET® MOSFET
FQB10N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 10 A, 610 m
October 2013
Features
• 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A • Low gate charge ( Typ. 45 nC) • Low Crss ( Typ. 17.5 pF) • 100% avalanche tested • F Fairchild Semiconductor mosfet | | |
5 | FQB10N60C | 600V N-Channel MOSFET FQB10N60C / FQI10N60C
QFET
FQB10N60C / FQI10N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize Fairchild Semiconductor mosfet | | |
6 | FQB11N40 | 400V N-Channel MOSFET FQB11N40 / FQI11N40
November 2001
FQB11N40 / FQI11N40
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min Fairchild Semiconductor mosfet | | |
7 | FQB11N40C | 400V N-Channel MOSFET FQB11N40C/FQI11N40C
QFET
www.datasheet4u.com
®
FQB11N40C/FQI11N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially Fairchild Semiconductor mosfet | |
Esta página es del resultado de búsqueda del FQB28N15. Si pulsa el resultado de búsqueda de FQB28N15 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |