Datasheet FDG332PZ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDG332PZ	MOSFET ( Transistor ) FDG332PZ P-Channel PowerTrench® MOSFET FDG332PZ P-Channel PowerTrench® MOSFET -20V, -2.6A, 97m: December 2008 tm Features Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A Max rDS(on) = 330m:	Fairchild Semiconductor

FDG33 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDG330P	P-Channel 1.8V Specified PowerTrench MOSFET FDG330P December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2	Fairchild Semiconductor
FDG332PZ	MOSFET ( Transistor ) FDG332PZ P-Channel PowerTrench® MOSFET FDG332PZ P-Channel PowerTrench® MOSFET -20V, -2.6A, 97m: December 2008 tm Features Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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