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Datasheet D10XB60H Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D10XB60H | GENERAL PURPOSE REETIFIERS SHINDENGEN
General Purpose Rectifiers
D10XB60H
600V 10A
OUTLINE DIMENSIONS
Case : 3S
FEATURES
Thin Single In-Line Package High current capacity with Small Package High IFSM Superior Thermal Conductivity
APPLICATION
Switching power supply Home Appliances, Office Equipment Factory Automation, Invert |  SHINDENGEN | data |
| 2 | D10XB60H | SILICON BRIDGE RECTIFIER TH97/10561QM
TW00/17276EM
IATF 0060636 SGS TH07/1033
D10XB60H
SILICON BRIDGE RECTIFIER
RBV4
PRV : 600 Volts Io : 10 Amperes
FEATURES :
* Glass passivated junction chip * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop |  EIC | rectifier |
| 3 | D10XB60H | Diode, Rectifier |  American Microsemiconductor | diode |
D10 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D10 | Memory Micromodules General Information for D1/ D2 and C Packaging D10, D15, D20, D22, C20, C30 MICROMODULES
Memory Micromodules General Information for D1, D2 and C Packaging
s
Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding inte  STMicroelectronics data | | |
| 2 | D1000 | NPN Transistor, 2SD1000 Renesas data | | |
| 3 | D1001 | NPN Transistor, 2SD1001 Renesas data | | |
| 4 | D1001UK | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED TetraFET
D1001UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2 D
4 M
3
E F
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA  Seme LAB data | | |
| 5 | D1002UK | METAL GATE RF SILICON FET MECHANICAL DATA
A
B C
1
4 M
2 3
F
D E
G
HK
PIN 1 PIN 3
SOURCE SOURCE
DA
PIN 2 PIN 4
IJ
DRAIN GATE
DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32
Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25
Inches 0.975 0.725 45° 0.25 0.1 Seme LAB gate | | |
| 6 | D1003UK | METAL GATE RF SILICON FET TetraFET
D1003UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA Seme LAB gate | | |
| 7 | D1004 | METAL GATE RF SILICON FET TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D (2 pls) E
B
1
2
3
A
G
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H I
F
M
K
J
N
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss Seme LAB gate | |
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