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Datasheet CS840F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CS840F | N-Channel MOSFET IRFS840(CS840F)
N-Channel MOSFET/N 沟 MOS 晶体管
用途:用于高效 DC/DC 转换和功率开关。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
特点: 低栅电荷,低反馈电容,开关速度快。
Features: Low gate c |  LZG | mosfet |
| 2 | CS840FA9D | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS840F A9D
○R
General Description：
CS840F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
500 7 35
0.68
performance and enhance |  Huajing Microelectronics | mosfet |
| 3 | CS840FA9H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET
CS840F A9H
○R
General Description：
CS840F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
500 8 45
0.57
performance and enhanc | Huajing Microelectronics | mosfet |
CS8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CS8 | Phase Control Thyristors CS 8
Phase Control Thyristors
VRRM = 800-1200 V IT(RMS) = 25 A IT(AV)M = 16 A
TO-64
1 2 3 2
VRSM VDSM V 900 1300
VRRM VDRM V 800 1200
Type
CS 8-08io2 CS 8-12io2
3
1
M5
1 = Anode, 2 = Cathode, 3 = Gate
Symbol IT(RMS) IT(AV)M ITSM
Test Conditions TVJ = TVJM Tcase = 85°  IXYS Corporation thyristor | | |
| 2 | CS80-E2GA102MYNS | Disk Ceramic Capacitors (1/2)
Disk Ceramic Capacitors with Lead Safety Standard Approved CS Series
BASIC INSULATION TYPE Temperature range: –25 to +125°C CLASS 2 HIGH DIELECTRIC FEATURES • Smaller than conventional capacitors. • Flame-resistant reinforced outer insulation prevents fires, electrical shock, and other  TDK capacitor | | |
| 3 | CS800 | Phase Control Thyristor Phase Control Thyristor
CS 800 ITRMS = 1600 A
ITAVM = 800 A VRRM = 1200 -1600 V
VRSM VDSM V 1200 1400 1600
V RRM V DRM V
Type
1 2 2 4
3
3 4
1200 1400 1600
CS 800 - 12io1 CS 800 - 14io1 CS 800 - 16io1
1
Symbol ITRMS ITAVM I TSM
Test Conditions TC = 80° C; 180° sine TVJ IXYS Corporation thyristor | | |
| 4 | CS80C86 | CMOS 16-Bit Microprocessor 80C86
March 1997
CMOS 16-Bit Microprocessor
Description
The Intersil 80C86 high performance 16-bit CMOS CPU is manufactured using a self-aligned silicon gate CMOS process (Scaled SAJI IV). Two modes of operation, minimum for small systems and maximum for larger applications such as multiprocessing,  Intersil Corporation cmos | | |
| 5 | CS80C86-2 | CMOS 16-Bit Microprocessor 80C86
March 1997
CMOS 16-Bit Microprocessor
Description
The Intersil 80C86 high performance 16-bit CMOS CPU is manufactured using a self-aligned silicon gate CMOS process (Scaled SAJI IV). Two modes of operation, minimum for small systems and maximum for larger applications such as multiprocessing, Intersil Corporation cmos | | |
| 6 | CS80C88 | CMOS 8/16-Bit Microprocessor 80C88
March 1997
CMOS 8/16-Bit Microprocessor
Description
The Intersil 80C88 high performance 8/16-bit CMOS CPU is manufactured using a self-aligned silicon gate CMOS process (Scaled SAJI IV). Two modes of operation, MINimum for small systems and MAXimum for larger applications such as multiprocess Intersil Corporation cmos | | |
| 7 | CS80C88-2 | CMOS 8/16-Bit Microprocessor 80C88
March 1997
CMOS 8/16-Bit Microprocessor
Description
The Intersil 80C88 high performance 8/16-bit CMOS CPU is manufactured using a self-aligned silicon gate CMOS process (Scaled SAJI IV). Two modes of operation, MINimum for small systems and MAXimum for larger applications such as multiprocess Intersil Corporation cmos | |
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