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Datasheet BUK7620-55 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BUK7620-55 | TrenchMOS transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-sta |
 NXP Semiconductors |
 |
| 3 | BUK7620-55 | TrenchMOS transistor Standard level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-sta |
NXP Semiconductors |
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| 2 | BUK7620-55A | N-channel TrenchMOS standard level FET BUK7620-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 16 June 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and quali |
NXP Semiconductors |
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| 1 | BUK7620-55A | standard level FET BUK7520-55A; BUK7620-55A
TrenchMOS™ standard level FET
Rev. 01 — 18 January 2001
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BU |
 Philips |
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