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Datasheet BGX885N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BGX885N | CATV amplifier module DISCRETE SEMICONDUCTORS
DATA SHEET
BGX885N CATV amplifier module
Product specification Supersedes data of 1995 Sep 14 File under Discrete Semiconductors, SC16 1997 Mar 26
Philips Semiconductors
Product specification
CATV amplifier module
FEATURES • Excellent linearity • Extremely low noi | NXP Semiconductors | amplifier |
BGX Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BGX400 | Silicon Switching Diodes BGX400
Silicon Switching Diodes
Switching applications High breakdown voltage Halfbridge rectifier
3
2 1
1 3 2
EHA07365
VPS05161
Type BGX400
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current
Marking GXs 1=C1/A2
Pin Configuration 2=C2 3=A1
Package SOT23 Infineon Technologies AG diode | | |
2 | BGX50A | Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) Silicon Switching Diode Array
q q
BGX 50 A
Bridge configuration High-speed switch diode chip
Type BGX 50 A
Marking U1s
Ordering Code (tape and reel) Q62702-G38
Pin Configuration
Package1) SOT-143
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Total p Siemens Semiconductor Group diode | | |
3 | BGX50A | Silicon Switching Diode Array BGX50A
Silicon Switching Diode Array
Bridge configuration High-speed switching diode chip
3 4 2
2
1
VPS05178
3
1
4
EHA00007
Type BGX50A
Marking U1s
Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3
Package SOT143
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage For Infineon Technologies AG diode | | |
4 | BGX7100 | Transmitter IQ modulator 3D
BGX7100
HV
Transmitter IQ modulator
Rev. 5 — 3 September 2012 Product data sheet
1. General description
The BGX7100 device combines high performance, high linearity I and Q modulation paths for use in radio frequency up-conversion. It supports RF frequency outputs in the range from 400 MHz t NXP Semiconductors data | | |
5 | BGX7101 | Transmitter IQ modulator 3D
BGX7101
HV
Transmitter IQ modulator
Rev. 3 — 3 September 2012 Product data sheet
1. General description
The BGX7101 device combines high performance, high linearity I and Q modulation paths for use in radio frequency up-conversion. It supports RF frequency outputs in the range from 400 MHz t NXP Semiconductors data | | |
6 | BGX7220 | Dual receiver down mixer BGX7220
Dual receiver down mixer
Rev. 1 — 8 August 2012 Product data sheet
1. General description
The BGX7220 device combines a pair of high performance, high linearity down-mixers for use in receivers having a common local oscillator, for instance having main and diversity paths. The device cove NXP Semiconductors receiver | | |
7 | BGX7221 | Dual receiver down mixer BGX7221
Dual receiver down mixer
Rev. 3 — 8 August 2012 Product data sheet
1. General description
The BGX7221 device combines a pair of high performance, high linearity down-mixers for use in receivers having a common local oscillator, for instance having main and diversity paths. The device cove NXP Semiconductors receiver | |
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Número de pieza | Descripción | Fabricantes | |
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