Datasheet ALD210804 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ALD210804	MOSFET ( Transistor ) ADVANCED LINEAR DEVICES, INC. PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR e TM EPAD ® ENAB L E D ALD210804 VGS(th)= +0.40V GENERAL DESCRIPTION The ALD210804 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory usi	Advanced Linear Devices

ALD210 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ALD210800A	PRECISION N-CHANNEL EPAD MOSFET ARRAY ADVANCED LINEAR DEVICES, INC. ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS(th)= +0.00V FEATURES & BENEFITS • Zero Threshold™ VGS(th) = 0.00 V +/-0.01V • VOS (VGS(th) match) to 2mV / 10mV max. • Sub-threshold voltage (nano-power) operation • < 100 mV	Advanced Linear Devices
ALD210808A	MOSFET ( Transistor ) ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD210808A/ALD210808 PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR VGS(th)= +0.80V GENERAL DESCRIPTION The ALD210808A/ALD210808 precision enhancement mode N-Channel EPAD® MOSFET array is precis	Advanced Linear Devices
ALD210808	MOSFET ( Transistor ) ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD210808A/ALD210808 PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR VGS(th)= +0.80V GENERAL DESCRIPTION The ALD210808A/ALD210808 precision enhancement mode N-Channel EPAD® MOSFET array is precis	Advanced Linear Devices

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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