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Datasheet 2SK656 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK656 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK656
Silicon N-Channel MOS FET
For switching
unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Features
q High-speed switching q Small drive current owing to high input inpedance q High electrostatic breakdown voltage
Parameter Drain to Source breakdown voltage Gate to Sourc |
 Panasonic Semiconductor |
 |
| 1 | 2SK656 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK0656 (2SK656)
Silicon N-Channel MOS FET
For switching
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power |
Panasonic Semiconductor |
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