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Datasheet 2SK2940 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | 2SK2940 | Silicon N Channel MOS FET High Speed Power Switching 2SK2940(L),2SK2940(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-563B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D
1 G 1 2 3
2
3
S
1. Gate 2. |
Hitachi Semiconductor |
|
2 | 2SK2940L | Silicon N Channel MOS FET High Speed Power Switching 2SK2940(L),2SK2940(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-563B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D
1 G 1 2 3
2
3
S
1. Gate 2. |
Hitachi Semiconductor |
|
1 | 2SK2940S | Silicon N Channel MOS FET High Speed Power Switching 2SK2940(L),2SK2940(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-563B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D
1 G 1 2 3
2
3
S
1. Gate 2. |
Hitachi Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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