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Datasheet 2SD661 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SD661 | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q
1.5 R0.9 R0.9
0.85
Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661
Symbol VCBO VC |
 Panasonic Semiconductor |
 |
| 3 | 2SD661 | Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q
1.5 R0.9 R0.9
0.85
Parameter Collector to base voltage Collector to 2SD661 2SD661A 2SD661
Symbol VCBO VC |
Panasonic Semiconductor |
|
| 2 | 2SD661A | Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A
Unit: mm
6.9±0.1
0.4
q q q
2.4±0.2 2.0±0.2 3.5±0.1
Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automat |
Panasonic Semiconductor |
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| 1 | 2SD661A | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A
Unit: mm
6.9±0.1
0.4
q q q
2.4±0.2 2.0±0.2 3.5±0.1
Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automat |
Panasonic Semiconductor |
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