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Datasheet 2SD227 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 2SD227 | Transistors Transistors 2SD227
Free Datasheet http://
Free Datasheet http://
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 USHA |
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| 7 | 2SD2271 | Silicon NPN Triple Diffused Type TRANSISTOR 2SD2271
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD2271
Motor Drive Applications High-Current Switching Applications
Unit: mm
• High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min)
Maximum Rat |
 Toshiba Semiconductor |
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| 6 | 2SD2271 | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2271
DESCRIPTION ·High DC Current Gain-
: hFE= 500(Min)@ (VCE= 2V, IC= 5A) ·High Breakdown Voltage :VCEO(sus)=200V（Min）
APPLICATIONS ·Motor drive applications ·High current switching application |
 INCHANGE |
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| 5 | 2SD2273 | Silicon NPN triple diffusion planar type Darlington(For power amplification) Power Transistors
2SD2273
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1500
φ 3.3±0.2 5.0±0.3 3.0
Unit: mm
20.0±0.5
s Features
q q q
6.0
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emit |
 Panasonic Semiconductor |
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