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Datasheet 2SB1116 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | 2SB1116 | PNP SILICON TRANSISTORS DATA SHEET
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES • Low VCE(sat)
VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose
PT = 0.75 W, VCEO = −50/ |
 NEC |
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| 10 | 2SB1116 | PNP EPITAXIAL SILICON TRANSISTOR UTC 2SB1116/A
PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
* Complement to 2SD1616/A
APPLICATIONS
* Audio Frequency Power Amplifier * Medium Speed Switching
1
TO-92
1: Emitter
2: Collector
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector-Base V |
 Unisonic Technologies |
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| 9 | 2SB1116 | PNP General Purpose Transistor 2SB1116/2SB1116A PNP General Purpose Transistor
P b Lead(Pb)-Free
3 BASE COLLECTOR 2
1 2
1 EMITTER
3
TO-92
Maximum Ratings ( TA=25℃ C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCBO VCEO VEBO lC 1116 |
 Weitron |
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| 8 | 2SB1116 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1116/1116A TRANSISTOR (PNP)
TO-92
FEATURES · High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A
1. EMITTER 2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. BASE
S |
 JCST |
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