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Datasheet 2SA1980 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SA1980 | PNP Silicon Transistor (General small signal amplifier) Semiconductor
2SA1980
PNP Silicon Transistor
Description
• General small signal amplifier
Features
• Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343
Ordering Information
Type NO. 2SA1980
Marking A1980
Pa | AUK corp | transistor |
2 | 2SA1980 | PNP Plastic Encapsulated Transistor 2SA1980
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
-150 mA, -50 V PNP Plastic Encapsulated Transistor
FEATURES
Low collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob=4pF (Typ.) Complements of the 2SC5343
G H
TO | Secos | transistor |
3 | 2SA1980 | SILICON PNP TRANSISTOR 2SA1980(3CG1980)
用途:用于一般小信号放大。
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
Purpose: General small signal amplifier applications.
特点: 低饱和压降,低输出电容,与 2SC5343(3DG5343)互补。
Features: Low VCE(sat),low output capacitance, complementary pai | LZG | transistor |
4 | 2SA1980E | PNP Silicon Transistor (General small signal amplifier) Semiconductor
2SA1980E
PNP Silicon Transistor
Description
• General small signal amplifier
Features
• Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343E
Ordering Information
Type NO. 2SA1980E Marking A : hF | AUK corp | transistor |
5 | 2SA1980EF | PNP Silicon Transistor (General small signal amplifier) Semiconductor
2SA1980EF
PNP Silicon Transistor
Description
• General small signal amplifier
Features
• Low collector saturation voltage : VCE(sat)=-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with 2SC5343EF
Ordering Information
Type NO. 2SA1980EF
Marking A | AUK corp | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
6 | 2SA100 | Ge PNP Drift ETC transistor | | |
7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY Inchange Semiconductor transistor | |
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