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Datasheet 2N4235 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
9 | 2N4235 | POWER TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
—Collector Current Continuous
Total Device Dissipation (a Ta =
25°C Derate above 25°C
Total Device Dissipation (a Tq =
25°C Derate above 25°C
Operating and Storage Junction Temperature Ran |
Motorola Semiconductors |
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8 | 2N4235 | Bipolar PNP Device 2N4235
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (T |
Seme LAB |
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7 | 2N4235 | Bipolar Transistor Bipolar Transistor
Collector 3
2 Base
1 Emitter
Description:
A silicon epitaxial PNP planar transistor in a TO-39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.
Maximum Ratings:
Characteristic Collector - Emitter Voltage Col |
Multicomp |
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6 | 2N4235 | PNP SILICON PLANAR TRANSISTORS Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company
PNP SILICON PLANAR TRANSISTORS
2N4234, 2N4235 2N4236
TO-39 Metal Can Package
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Base Cu |
CDIL |
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Número de pieza | Descripción | Fabricantes | |
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