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Datasheet 1N63 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N63 | Diode, Rectifier | American Microsemiconductor | diode |
2 | 1N63 | (1N6x) GOLD BONDED DIODES | BC | diode |
3 | 1N63 | Diode Switching 125V 0.0003A 2-Pin DO-35 | New Jersey Semiconductor | diode |
4 | 1N6300 | Zener Diode, Rectifier | Microsemi Corporation | tvs-diode |
5 | 1N6300 | TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR 1.5KE6.8 THRU 1.5KE440CA
TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to 440 Volts
Case Style 1.5KE
Peak Pulse Power - 1500 Watts
FEATURES
1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA.
0.375 (9.5) 0.285 (7.2)
1.0 (25.4) MIN.
♦ Plastic package has Underwriters Laboratory Fl | General Semiconductor | tvs-diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f Formosa MS diode | |
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Número de pieza | Descripción | Fabricantes | |
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